Er-doped Si-rich nitride ( SRN ∶Er) films and three-period superlattices of SRN ∶Er Ni were deposited by reactive magnetronsputtering technique and annealed at 1100 ℃. The photo luminescence spectra of SRN ∶Er films show two emission bands, one centered at 665～750 nm and another peaked at 1. 54μm, where the 665～750 nmone is due to Si nanocrystals in SRN and the 1. 54μmone is characteristic for Er3+. The photo luminescence spectra of the super lattices exhibit fine structures of 3 + Er light emission around 520, 550 and 850 nm and a 12-fold enhanced Er light emission at 1. 54 μm. The appearance of these fine structures indicates that the local environments around Er3 + become ordered and Er3+ is much more optically active in such ordered environments than in SRN ∶Er films. Raman-scattering spectra measurements demonstrate an increase in the number of Sinanocrystals. Therefore, the 12-fold enhancement at 1.54μmis a result of the enhancement in the Er3+ optical activation and the increase in the number of Si nanocrystals .

To solve the problem of low extractive efficiency in semiconductor light emitting diodes(LED), a proposal of introducing microstructures onto the top of LED was presented. Based on this idea, the InGaAlP quantum wells LEDs with centric ring-grooves microstructures have been successfully prepared by the conventional micro-fabrication. As a result, the vertical extractive light intensity from the novel LED was obviously stronger than that of the LED without microstructures. This success provides a new method for improving extraction efficiency from LED.

The contour of the energy bandgap of III-V quinary, AlGaInPAs, lattice matched to GaAs has been calculated, and the segregation coefficient of Al in the solution used for growing AlGaInPAs/GaAs has been analysised. The effect of supercool on the solid composition of AlGaInPAs on GaAs, resulted from Al's segregating from the solution, has been demonstrated experimentally, no effect on other characteres was found.